InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications

Ganjipour, Bahram and Tizno, Ofogh and Heurlin, Magnus and Borgström, Magnus T and Thelander, Claes and Samuelson, Lars (2014) InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications. In: Device Research Conference (DRC), 2014 72nd Annual. IEEE, USA, pp. 123-124. ISBN 9781479954056

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Abstract

Ever since the invention of the tunnel diodes by Leo Esaki in 1957, they have been the subject of numerous studies as building blocks for ultra-low power electronics and also as sub-cell connections in multi-junction solar cells. Tunneling field-effect transistors (TFETs) have attracted a lot of attention for ultra low-power electronic applications because of superior OFF-state performance. However, to date, TFETs suffer from poor-ON state currents which can be addressed by increasing the tunneling area and electric field. In this respect, radial nanowire heterostructures are attractive candidates for boosting the ON-state of T-FETs because the tunneling area is proportional to LchannelRNW. A core/shell geometry also enables the gate electric field to align with the internal junction field which may result in an improved SS.

Item Type: Contribution in Book/Report/Proceedings
Departments: Faculty of Science and Technology > Physics
ID Code: 89244
Deposited By: ep_importer_pure
Deposited On: 15 Dec 2017 00:06
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 05:50
URI: https://eprints.lancs.ac.uk/id/eprint/89244

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