Ballistic transport effects in a sub-micron InSb quantum well cross structure

Gilbertson, A. M. and Fearn, M. and Kormanyos, A. and Read, D. E. and Lambert, C. J. and Buckle, L. and Ashley, T. and Solin, S. A. and Cohen, L. F. (2011) Ballistic transport effects in a sub-micron InSb quantum well cross structure. AIP Conference Proceedings, 1399. pp. 325-326. ISSN 0094-243X

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Abstract

We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.

Item Type:
Journal Article
Journal or Publication Title:
AIP Conference Proceedings
Subjects:
ID Code:
89229
Deposited By:
Deposited On:
15 Dec 2017 00:04
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 09:22