Durrani, Zahid A. K. and Jones, Mervyn E. and Wang, Chen and Scotuzzi, M. and Hagen, C. W. (2017) Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition. Nanotechnology, 28 (47): 474002. ISSN 0957-4484
Electron_transport_RT_SE_effects_PtC_final_Durrani_et_al.pdf - Accepted Version
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Abstract
Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ~20 nm, integrated within ~100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ~20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Room-temperature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.