Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition

Durrani, Zahid A. K. and Jones, Mervyn E. and Wang, Chen and Scotuzzi, M. and Hagen, C. W. (2017) Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition. Nanotechnology, 28 (47). ISSN 0957-4484

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Abstract

Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ~20 nm, integrated within ~100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ~20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Room-temperature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.

Item Type:
Journal Article
Journal or Publication Title:
Nanotechnology
Additional Information:
This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/1361-6528/aa9356
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2200/2208
Subjects:
ID Code:
89204
Deposited By:
Deposited On:
05 Mar 2018 13:36
Refereed?:
Yes
Published?:
Published
Last Modified:
03 Jul 2020 03:24