Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

Alhodaib, Aiyeshah and Noori, Yasir and Carrington, Peter James and Sanchez, Ana and Thompson, Michael Dermot and Young, Robert James and Krier, Anthony and Marshall, Andrew Robert Julian (2018) Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires. Nano Letters, 18 (1). pp. 235-240. ISSN 1530-6984

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There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron–hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.

Item Type:
Journal Article
Journal or Publication Title:
Nano Letters
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This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright 2018 © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
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30 Nov 2017 16:50
Last Modified:
21 Jun 2024 00:53