Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.

Alsharif, Ghazi and Robinson, Benjamin James and Kolosov, Oleg Victor (2016) Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures. In: ANM2016: 7th International Conference on Advanced Nanomaterials, 2016-07-252016-07-27.

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Abstract

Graphene and 2D materials have proven to be promising materials to be used to fabricate heterostructures, and also promising candidate to be used in combination with optoelectronic devices, due to their unique electronic properties1. Here, the electrical properties of heterostructures, as well as the specific contacts area onto graphene are investigated by using properly designed test patterns. We firstly use PlayStation micro-probing (PSM) for macroscopic characterisations. Secondly, High- spatial resolution current mapping needed to provide an insight into the nanoscale mechanisms of electrical transport. We use scanning probe microscopy (SPM) as well as scanning gate microscopy (SGM), with a conductive diamond tip directly access to nano-resolution structures both topographically and electrically, with illumination and dark regimes. Additionally, we plan to report measurement in 2D materials heterostructures and their photoresponse on this regimes.

Item Type: Contribution to Conference (Other)
Journal or Publication Title: ANM2016: 7th International Conference on Advanced Nanomaterials
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3300
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 87430
Deposited By: ep_importer_pure
Deposited On: 23 Aug 2017 07:54
Refereed?: Yes
Published?: Published
Last Modified: 14 Sep 2019 23:52
URI: https://eprints.lancs.ac.uk/id/eprint/87430

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