Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires

Chen, Xiren and Zhuang, Qiandong and Alradhi, Hayfaa and Jin, Zhiming and Zhu, Liangqing and Chen, Xin and Shao, Jun (2017) Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires. Nano Letters, 17 (3). pp. 1545-1551. ISSN 1530-6984

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Abstract

Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher-energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier–phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.

Item Type:
Journal Article
Journal or Publication Title:
Nano Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
85980
Deposited By:
Deposited On:
19 Nov 2019 14:15
Refereed?:
Yes
Published?:
Published
Last Modified:
20 Oct 2020 05:00