A single electron transistor on an atomic force microscope probe

Brenning, Henrik T. A. and Kubatkin, Sergey E. and Erts, Donats and Kafanov, Sergey and Bauch, Thilo and Delsing, Per (2006) A single electron transistor on an atomic force microscope probe. Nano Letters, 6 (5). pp. 937-941. ISSN 1530-6984

Full text not available from this repository.

Abstract

We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.

Item Type:
Journal Article
Journal or Publication Title:
Nano Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/1500/1502
Subjects:
?? bioengineeringgeneral chemistrygeneral materials sciencecondensed matter physicsmechanical engineeringmaterials science(all)chemistry(all) ??
ID Code:
84898
Deposited By:
Deposited On:
27 Feb 2017 14:48
Refereed?:
Yes
Published?:
Published
Last Modified:
16 Jul 2024 10:25