An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K

Brenning, Henrik and Kafanov, Sergey and Duty, Tim and Kubatkin, Sergey and Delsing, Per (2006) An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K. Journal of Applied Physics, 100 (11). ISSN 0021-8979

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Abstract

We present the measurement of a radio-frequency single-electron transistor that displays a very high charge sensitivity of 1.9 μe Hz at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 μe Hz in the superconducting and normal state, respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures; 40 mK, 1.8, and 4.2 K.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
ID Code:
84897
Deposited By:
Deposited On:
27 Feb 2017 14:44
Refereed?:
Yes
Published?:
Published
Last Modified:
26 Aug 2020 02:50