An all-chromium single electron transistor:a possible new element of single electronics

Kuzmin, L. S. and Pashkin, Yuri and Tavkhelidze, A. N. and Ahlers, F.-J. and Weimann, T. and Quenter, D. and Niemeyer, J. (1996) An all-chromium single electron transistor:a possible new element of single electronics. Applied Physics Letters, 68 (20). ISSN 0003-6951

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Abstract

The realization of an all‐chromium single electron tunneling (SET) transistor is reported. Chromium was chosen as a normal metal with small grain structure forming the oxide layer with a low potential barrier and great chemical and thermal stability. The transistor showed classical I‐V curves with an offset voltage of 450 μV and an amplitude of gate modulation of 160 μV. Fitting a tunnel current expression in the experimental I‐V curve gave a height of the potential barrier φ=170 meV and a width of the barrier d=16 Å. The SET transistor showed a charge sensitivity of 7×10−4 e/Hz1/2 at 10 Hz.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 84755
Deposited By: ep_importer_pure
Deposited On: 20 Feb 2017 09:00
Refereed?: Yes
Published?: Published
Last Modified: 30 Sep 2019 20:04
URI: https://eprints.lancs.ac.uk/id/eprint/84755

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