Pashkin, Yuri and Nakamura, Y. and Tsai, Jaw-Shen (1999) Metallic resistively coupled single-electron transistor. Applied Physics Letters, 74 (1). pp. 132-134. ISSN 0003-6951
Full text not available from this repository.Abstract
We have fabricated and measured transport properties of resistively coupled single-electron transistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and was connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunnel junctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb blockade pattern was observed. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data and indicate excessive electron temperature of the devices.