Metallic resistively coupled single-electron transistor

Pashkin, Yuri and Nakamura, Y. and Tsai, Jaw-Shen (1999) Metallic resistively coupled single-electron transistor. Applied Physics Letters, 74 (1). pp. 132-134. ISSN 0003-6951

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Abstract

We have fabricated and measured transport properties of resistively coupled single-electron transistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and was connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunnel junctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb blockade pattern was observed. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data and indicate excessive electron temperature of the devices.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
84751
Deposited By:
Deposited On:
20 Feb 2017 09:30
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2020 06:43