Room-temperature Al single-electron transistor made by electron-beam lithography

Pashkin, Yuri and Nakamura, Y. and Tsai, Jaw-Shen (2000) Room-temperature Al single-electron transistor made by electron-beam lithography. Applied Physics Letters, 76 (16). pp. 2256-2258. ISSN 0003-6951

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Abstract

We present a lithographically made Al single-electron transistor that shows gate modulation at room temperature. The temperature dependence of the modulation agrees with the orthodox theory, however, energy-level quantization in a tiny metallic island affects the device characteristics below 30 K. The charge-equivalent noise of the device at 300 K was measured to be ;431022 e/Hz1/2 at 1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
84750
Deposited By:
Deposited On:
20 Feb 2017 09:34
Refereed?:
Yes
Published?:
Published
Last Modified:
11 Mar 2020 05:52