Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites:application to read-head sensors for ultrahigh-density magnetic recording

Solin, S. A. and Hines, D. R. and Tsai, Jaw-Shen and Pashkin, Yuri and Chung, S. J. and Goel, N. and Santos, M. (2002) Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites:application to read-head sensors for ultrahigh-density magnetic recording. IEEE Transactions on Magnetics, 38 (1). pp. 89-94. ISSN 0018-9464

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Abstract

The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/spl times/3 /spl mu/m long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.

Item Type:
Journal Article
Journal or Publication Title:
IEEE Transactions on Magnetics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2200/2208
Subjects:
ID Code:
84746
Deposited By:
Deposited On:
20 Feb 2017 09:56
Refereed?:
Yes
Published?:
Published
Last Modified:
11 Mar 2020 05:52