Solin, S. A. and Hines, D. R. and Tsai, Jaw-Shen and Pashkin, Yuri and Chung, S. J. and Goel, N. and Santos, M. (2002) Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites:application to read-head sensors for ultrahigh-density magnetic recording. IEEE Transactions on Magnetics, 38 (1). pp. 89-94. ISSN 0018-9464
Full text not available from this repository.Abstract
The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/spl times/3 /spl mu/m long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.