Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Solin, S. A. and Hines, D. R. and Rowe, A. C. H. and Tsai, Jaw-Shen and Pashkin, Yuri and Chung, S. J. and Goel, N. and Santos, M. (2002) Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording. Applied Physics Letters, 80 (21). pp. 4012-4014. ISSN 0003-6951

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Abstract

A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance ~EMR! effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6% and a current sensitivity of 147 V/T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 84745
Deposited By: ep_importer_pure
Deposited On: 20 Feb 2017 10:04
Refereed?: Yes
Published?: Published
Last Modified: 17 Feb 2020 03:27
URI: https://eprints.lancs.ac.uk/id/eprint/84745

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