Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

Im, Hyunsik and Pashkin, Yuri and Yamamoto, T. and Astafiev, Oleg V. and Nakamura, Y. and Tsai, Jaw-Shen (2006) Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers. Applied Physics Letters, 88 (11): 112113. ISSN 0003-6951

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Abstract

We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.

Item Type:

Journal Article

Journal or Publication Title:

Applied Physics Letters

Uncontrolled Keywords:

/dk/atira/pure/subjectarea/asjc/3100/3101

Subjects:

?? physics and astronomy (miscellaneous) ??

Departments:

Faculty of Science and Technology > Physics

ID Code:

84739

Deposited By:

ep_importer_pure

Deposited On:

20 Feb 2017 11:06

Refereed?:

Yes

Published?:

Published

Last Modified:

15 Jul 2024 16:49

URI:

https://eprints.lancs.ac.uk/id/eprint/84739