Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

Im, Hyunsik and Pashkin, Yuri and Yamamoto, T. and Astafiev, Oleg V. and Nakamura, Y. and Tsai, Jaw-Shen (2006) Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers. Applied Physics Letters, 88 (11). ISSN 0003-6951

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Abstract

We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
84739
Deposited By:
Deposited On:
20 Feb 2017 11:06
Refereed?:
Yes
Published?:
Published
Last Modified:
07 Jan 2020 05:17