Parity effect in Al and Nb single electron transistors in a tunable environment

Savin, A. M. and Meschke, M. and Pekola, Jukka P. and Pashkin, Yuri and Li, T. F. and Im, Hyunsik and Tsai, Jaw-Shen (2007) Parity effect in Al and Nb single electron transistors in a tunable environment. Applied Physics Letters, 91 (6). ISSN 0003-6951

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Abstract

Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in a tunable electromagnetic environment. The device with an Al island demonstrates gate charge modulation with 2e periodicity in a wide range of environmental impedances at bath temperatures below 340 mK. Contrary to the results of the Al sample, the authors were not able to detect 2e periodicity under any conditions on similar samples with Nb island. The authors attribute this to the material properties of Nb.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
84736
Deposited By:
Deposited On:
20 Feb 2017 11:34
Refereed?:
Yes
Published?:
Published
Last Modified:
18 Nov 2020 04:48