Low-frequency charge noise in suspended aluminum single-electron transistors

Li, T. F. and Pashkin, Yuri and Astafiev, Oleg V. and Nakamura, Y. and Tsai, Jaw-Shen and Im, Hyunsik (2007) Low-frequency charge noise in suspended aluminum single-electron transistors. Applied Physics Letters, 91 (3). ISSN 0003-6951

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Abstract

The authors have developed a fabrication method for suspended metallic single-electron transistors SETs utilizing a combination of conventional angle evaporation technique and ashing of the underlying organic polymer. The authors’ Al-based suspended devices exhibit clear Coulomb blockade effects typical for conventional SETs. The measured low-frequency charge noise is rather low but still within the range reported for conventional Al devices. We suggest that the noise level can be further reduced by decreasing the effective SET temperature.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
84735
Deposited By:
Deposited On:
20 Feb 2017 11:16
Refereed?:
Yes
Published?:
Published
Last Modified:
07 Jan 2020 05:17