Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

Tang, Liangliang and Xu, Chang and Liu, Zhuming and Lu, Qi and Marshall, Andrew and Krier, Anthony (2017) Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells. Solar Energy Materials and Solar Cells, 163. pp. 263-269. ISSN 0927-0248

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Abstract

Abstract Zn diffusion processes in n-Ga0.78In0.22As0.2Sb0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface “dead region”. The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The “dead region” is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055 °C-SiN ceramics emitter, the output power density of the GaInAsSb cell obtained under Ga-rich condition is much larger than that of the cell obtained under pure Zn condition, which demonstrated that the GaInAsSb cells can be fabricated without precise etching under Ga-rich conditions.

Item Type:
Journal Article
Journal or Publication Title:
Solar Energy Materials and Solar Cells
Additional Information:
This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 163, 2017 DOI: 10.1016/j.solmat.2017.01.019
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2100/2105
Subjects:
ID Code:
84639
Deposited By:
Deposited On:
23 Feb 2017 14:20
Refereed?:
Yes
Published?:
Published
Last Modified:
22 Oct 2020 04:11