Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations

Szyniszewski, Marcin and Mostaani, Elaheh and Drummond, Neil David and Falko, Vladimir (2017) Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations. Physical review B, 95. ISSN 1098-0121

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Abstract

Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide contact pair densities to allow a description of contact (exchange) interactions between charge carriers using first-order perturbation theory. Our data indicate that the binding energy of a trion is generally larger than that of a biexciton in 2D semiconductors. We provide interpolation formulas giving the binding energy and contact density of 2D semiconductors as functions of the electron and hole effective masses and the in-plane polarizability.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Additional Information:
© 2017 American Physical Society
ID Code:
84631
Deposited By:
Deposited On:
09 Feb 2017 11:18
Refereed?:
Yes
Published?:
Published
Last Modified:
18 Sep 2020 03:23