Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Chua, Cassandra and Connolly, Malcolm and Lartsev, Arseniy and Yager, Tom and Lara-Avila, Samuel and Kubatkin, Sergey and Kopylov, Sergey and Falko, Vladimir and Yakimova, Rositza and Pearce, Ruth and Janssen, T. J. B. M. and Tzaenchuk, Alexander and Smith, Charles G. (2014) Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene. Nano Letters, 14 (6). pp. 3369-3373. ISSN 1530-6984

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Abstract

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

Item Type:
Journal Article
Journal or Publication Title:
Nano Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
84347
Deposited By:
Deposited On:
25 Jan 2017 14:24
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 08:56