Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals

Ochoa, H. and Guinea, F. and Falko, Vladimir (2013) Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals. Physical review B, 88 (19): 195417. ISSN 1098-0121

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Abstract

We propose a theory of spin relaxation of electrons and holes in two-dimensional hexagonal crystals such as atomic layers of transition-metal dichalcogenides (MoS2, WSe2, etc.). We show that, even in intrinsically defect-free crystals, their flexural deformations are able to generate spin relaxation of carriers. Based on symmetry analysis, we formulate a generic model for spin-lattice coupling between electrons and flexural deformations and use it to determine temperature- and material-dependent spin lifetimes in atomic crystals in ambient conditions.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Subjects:
?? valley polarizationmos2transistorslayers ??
ID Code:
84323
Deposited By:
Deposited On:
25 Jan 2017 11:54
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2024 14:43