Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

Gubicza, Agnes and Manrique, David and Posa, Laszlo and Lambert, Colin John and Mihály, György and Csontos, Miklós and Halbritter, Andras (2016) Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design. Scientific Reports, 6. ISSN 2045-2322

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Abstract

Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.

Item Type: Journal Article
Journal or Publication Title: Scientific Reports
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/1000
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 84031
Deposited By: ep_importer_pure
Deposited On: 17 Jan 2017 12:10
Refereed?: Yes
Published?: Published
Last Modified: 08 Oct 2019 02:33
URI: https://eprints.lancs.ac.uk/id/eprint/84031

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