Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

Benoit, M. and Mendizabal, J. Bilbao de and Casse, G. and Chen, K. and Bello, F. A. Di and Ferrere, D. and Golling, T. and Gonzalez-Sevilla, S. and Iacobucci, G. and Lanni, F. and Liu, H. and Meloni, F. and Meng, L. and Miucci, A. and Muenstermann, D. and Nessi, M. and Peric, I. and Rimoldi, M. and Ristic, B. and Pinto, M. Vicente Barrero and Vossebeld, J. and Weber, M. and Wu, W. and Xu, L. (2016) Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype. Journal of Instrumentation, 11: P07019. ISSN 1748-0221

Other (1603.07798)
1603.07798v3 - Accepted Version
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Abstract

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.