Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides

Danovich, M. and Aleiner, I. L. and Drummond, N. D. and Fal’ko, V. I. (2017) Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides. IEEE Journal of Selected Topics in Quantum Electronics, 23 (1): 6000105. ISSN 1077-260X

[thumbnail of 1510.06288v1]
PDF (1510.06288v1)
1510.06288v1.pdf - Accepted Version

Download (594kB)


We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS2, MoSe2, WS2, and WSe2, we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.

Item Type:
Journal Article
Journal or Publication Title:
IEEE Journal of Selected Topics in Quantum Electronics
Additional Information:
©2016 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Uncontrolled Keywords:
?? chalcogenide glasseselectron-phonon interactionshot carriersmolybdenum compoundsmonolayerstungsten compounds2d transition metal dichalcogenidesborn effective chargesmos2mose2ws2wse2cooling timesexcitation energiesfast photoexcited carrier relaxationhomopo ??
ID Code:
Deposited By:
Deposited On:
10 Oct 2016 12:06
Last Modified:
06 Jun 2024 00:32