Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Kesaria, Manoj and De La Mare, Martin and Krier, Anthony (2016) Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics, 49 (43). p. 435107. ISSN 0022-3727

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Abstract

Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in-situ by reflection high energy electron diffraction and ex-situ by high resolution X-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron-heavy hole (e1-hh1) and electron-light hole (e1-lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~ 4.20 µm and peak detectivity D* =1.25×109 cm Hz1/2 W-1.

Item Type: Journal Article
Journal or Publication Title: Journal of Physics D: Applied Physics
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 81556
Deposited By: ep_importer_pure
Deposited On: 13 Sep 2016 10:36
Refereed?: Yes
Published?: Published
Last Modified: 18 Nov 2019 02:56
URI: https://eprints.lancs.ac.uk/id/eprint/81556

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