Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"

Craig, Adam and Marshall, Andrew Robert Julian and Tian, Z.-B. and Krishna, S. (2015) Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb". Infrared Physics and Technology, 70. pp. 107-110. ISSN 1350-4495

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Abstract

InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.

Item Type:
Journal Article
Journal or Publication Title:
Infrared Physics and Technology
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
81313
Deposited By:
Deposited On:
23 Aug 2016 12:58
Refereed?:
Yes
Published?:
Published
Last Modified:
24 Mar 2020 05:12