Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

Fernández-Delgado, N. and Herrera, M. and Molina, S. I. and Castro, C. and Duguay, Stephanie and James, J. S. and Krier, Anthony (2015) Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells. Applied Surface Science, 359. pp. 676-678. ISSN 0169-4332

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Abstract

The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.

Item Type:
Journal Article
Journal or Publication Title:
Applied Surface Science
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2500/2508
Subjects:
ID Code:
81093
Deposited By:
Deposited On:
18 Aug 2016 15:06
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Apr 2020 04:51