Fernández-Delgado, N. and Herrera, M. and Molina, S. I. and Castro, C. and Duguay, Stephanie and James, J. S. and Krier, Anthony (2015) Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells. Applied Surface Science, 359. pp. 676-678. ISSN 0169-4332
Full text not available from this repository.Abstract
The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.