Implementation of Single-Electron Transistor with Resistive Gate

Pashkin, Yuri and Nakamura, Yasunobu and Tsai, Jaw Shen (1999) Implementation of Single-Electron Transistor with Resistive Gate. Japanese Journal of Applied Physics, 38 (1 B). pp. 406-409. ISSN 0021-4922

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Abstract

We have fabricated and measured a resistively coupled single electron transistor (R-SET). In our implementation, a chromium thin-film resistive gate was connected directly to a mesoscopic island formed between two ultrasmall AI/AIOx/AI tunnel junctions. The transistor was fabricated by electron beam lithography using the suspended bridge technique. We have measured the current-voltage-gate voltage dependences of the R-SET and observed a characteristic Coulomb blockade pattern. Our simulations based on the orthodox theory of single electron tunneling show good qualitative agreement with the experimental data.

Item Type: Journal Article
Journal or Publication Title: Japanese Journal of Applied Physics
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 80624
Deposited By: ep_importer_pure
Deposited On: 09 Aug 2016 08:30
Refereed?: Yes
Published?: Published
Last Modified: 11 Feb 2020 08:59
URI: https://eprints.lancs.ac.uk/id/eprint/80624

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