Suspended single-electron transistor as a detector of its nanomechanical motion

Pashkin, Yuri and Li, Tiefu and Pekola, Jukka and Astafiev, Oleg and Knyazev, Dmitry and Hoehne, Felix and Im, Hyunsik and Nakamura, Yasunobu and Tsai, Jaw Shen (2010) Suspended single-electron transistor as a detector of its nanomechanical motion. In: ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. IEEE, AUS, pp. 340-342. ISBN 9781424452613

Abstract

We have fabricated an Al based single-electron transistor transistor (SET) whose island is suspended above the substrate. The structure can be considered as a two-in-one device containing a doubly clamped beam and a transducer that converts mechanical vibrations into variations in the SET current. In addition to the regular side gate, a bottom gate with a large capacitance, is placed beneath the SET island for increasing the SET coupling to the mechanical motion. The observed response is reproduced in our simulations, which are based on the orthodox model that considers the fundamental flexural mode of the resonating SET island.