Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

James Asirvatham, Juanita Saroj and Fujita, Hiromi and Fernández-Delgado, N. and Herrera, M. and Molina, S. I. and Marshall, Andrew Robert Julian and Krier, Anthony (2015) Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell. Materials Research Innovations, 19 (7). pp. 512-516. ISSN 1432-8917

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GaSb quantum dot (QD) solar cell structures were grown by molecular beam epitaxy on GaAs substrates. We investigate the reduction in open-circuit voltage and study the influence of the location of QD layers and their delta doping within the solar cell. Devices with 5 layers of delta-doped QDs placed in the intrinsic, n- and p-regions of a GaAs solar cell are experimentally investigated, and the deduced values of Jsc, Voc, fill factor, efficiency (η) are compared. A trade-off is needed to minimize the Voc degradation while maximizing the short circuit current density (Jsc) enhancement due to sub-bandgap absorption. The voltage recovery is attributed to the removal of the QDs from the high-field region which reduces SRH recombination. The devices with p- or n-doped QDs placed in the flat band potential (p- or n-region) show a recovery in Jsc and Voc compared to devices with delta-doped QDs placed in the depletion region. However, there is less photocurrent arising from the absorption of sub-band gap photons. Furthermore, the long wavelength photoresponse of the n-doped QDs placed in the n-region shows a slight improvement compared to the control cell. The approach of placing QDs in the n-region of the solar cell instead of the depletion region is a possible route towards increasing the conversion efficiency of QD solar cells.

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Journal Article
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Materials Research Innovations
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This is an Accepted Manuscript of an article published by Taylor & Francis in Materials Research Innovations on 21/01/2016, available online:
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04 Aug 2016 10:08
Last Modified:
11 May 2022 04:58