Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

Fernandez-Garcia, M. and Gallrapp, C. and Moll, M. and Muenstermann, Daniel Matthias Alfred (2016) Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process. Journal of Instrumentation, 11. ISSN 1748-0221

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Abstract

High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2×1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7×1015 neq/cm2 to decrease to the level of the unirradiated detector after 2×1016 neq/cm2.

Item Type: Journal Article
Journal or Publication Title: Journal of Instrumentation
Additional Information: © CERN 2016, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI.
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/2600/2610
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 80014
Deposited By: ep_importer_pure
Deposited On: 10 Jun 2016 10:18
Refereed?: Yes
Published?: Published
Last Modified: 18 Nov 2019 02:50
URI: https://eprints.lancs.ac.uk/id/eprint/80014

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