Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures

Lulla, K. J. and Defoort, M. and Blanc, C. and Bourgeois, O. and Collin, E. (2013) Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures. Physical review letters, 110 (17). ISSN 1079-7114

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Abstract

We report on experiments performed at low temperatures on aluminum covered silicon nanoelectromechanical resonators. The substantial difference observed between the mechanical dissipation in the normal and superconducting states measured within the same device unambiguously demonstrates the importance of normal-state electrons in the damping mechanism. The dissipative component becomes vanishingly small at very low temperatures in the superconducting state, leading to exceptional values for the quality factor of such small silicon structures. A critical discussion is given within the framework of the standard tunneling model.

Item Type:
Journal Article
Journal or Publication Title:
Physical review letters
Additional Information:
© 2013 American Physical Society
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
ID Code:
79555
Deposited By:
Deposited On:
16 May 2016 10:38
Refereed?:
Yes
Published?:
Published
Last Modified:
20 Sep 2020 03:32