Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

Fernández-Delgado, N. and Herrera, M. and Chisholm, M. F. and Ahmad Kamarudin, Mazliana and Zhuang, Qiandong and Hayne, Manus and Molina, S. I. (2017) Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. Applied Surface Science, 395. pp. 136-139. ISSN 0169-4332

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In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3. Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

Item Type:
Journal Article
Journal or Publication Title:
Applied Surface Science
Additional Information:
This is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, 395, 2017 DOI: 10.1016/j.apsusc.2016.04.131
Uncontrolled Keywords:
?? gasbquantum dotscanning transmission electron microscopythermal annealingsurfaces, coatings and films ??
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Deposited On:
05 May 2016 15:30
Last Modified:
02 Mar 2024 01:21