Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling

Liu, Fucai and Zheng, Shoujun and Chaturvedi, Apoorva and Zolyomi, Viktor and Zhou, Jiadong and Fu, Qundong and Zhu, Chao and Yu, Peng and Zeng, Qingsheng and Drummond, Neil D. and Fan, Hong Jin and Kloc, Christian and Fal'ko, Vladimir I. and He, Xuexia and Liu, Zheng (2016) Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling. Nanoscale, 8 (11). pp. 5826-5834. ISSN 2040-3364

PDF (Nanoscale_final_version)
Nanoscale_final_version.pdf - Accepted Version
Available under License Creative Commons Attribution.

Download (1MB)


Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm2 V-1 s-1 and an on/off ratio of 105, together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W-1. The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy.

Item Type:
Journal Article
Journal or Publication Title:
Additional Information:
© Royal Society of Chemistry 2016.
Uncontrolled Keywords:
ID Code:
Deposited By:
Deposited On:
01 Apr 2016 07:58
Last Modified:
21 Sep 2023 02:00