(INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels

Adamopoulos, George (2016) (INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels. In: MEETING on Filed Effect Transistors, 2016-03-14 - 2016-03-18.

Full text not available from this repository.

Item Type:

Contribution to Conference (Speech)

Journal or Publication Title:

MEETING on Filed Effect Transistors : 2D Materials Field-Effect Transistors

Departments:

Faculty of Science and Technology > Engineering

ID Code:

78785

Deposited By:

ep_importer_pure

Deposited On:

23 Mar 2016 09:48

Refereed?:

Published?:

Published

Last Modified:

15 Jul 2024 08:28

URI:

https://eprints.lancs.ac.uk/id/eprint/78785