(INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels

Adamopoulos, George (2016) (INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels. In: MEETING on Filed Effect Transistors, 2016-03-142016-03-18.

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Item Type:
Contribution to Conference (Speech)
Journal or Publication Title:
MEETING on Filed Effect Transistors
ID Code:
78785
Deposited By:
Deposited On:
23 Mar 2016 09:48
Refereed?:
No
Published?:
Published
Last Modified:
12 Oct 2020 00:27