Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy

Debnath, A. and Gandhi, J. S. and Kesaria, Manoj and Pillai, R. and Starikov, D. and Bensaoula, A. (2016) Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy. Journal of Applied Physics, 119 (10). ISSN 0021-8979

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Abstract

The self-induced growth of GaN nanocolumns (NCs) on SixN1−x/Si (111) is investigated as a function of the ratio of molecular to atomic nitrogen species generated via plasma assisted molecular beam epitaxy. Relative concentrations of the molecular and atomic species are calculated using optical emission spectroscopy. The growth rate (GR), diameter, and density of NCs are found to vary with the molecular to atomic nitrogen species relative abundance ratio within the plasma cavity. With increasing ratio, the GR and diameter of NCs increase while the density of NCs seems to be decreasing. The morphologies and the coalescence of GaN NCs exhibit a trend for molecular/atomic ratios up to 11, beyond which they still change but at a lower rate. The detrimental effect of taperedness of the NCs decreases with increasing molecular/atomic ratios. This is possibly because of reduction in radial growth in NCs due to increase in diffusivity of nitrogen species with increasing ratios.

Item Type: Journal Article
Journal or Publication Title: Journal of Applied Physics
Additional Information: Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 119 (10), 2016 and may be found at http://scitation.aip.org/content/aip/journal/jap/119/10/10.1063/1.4943179
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 78781
Deposited By: ep_importer_pure
Deposited On: 29 Mar 2016 12:22
Refereed?: Yes
Published?: Published
Last Modified: 22 Aug 2019 01:49
URI: https://eprints.lancs.ac.uk/id/eprint/78781

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