Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

Wagener, Magnus C. and Carrington, Peter James and Botha, Johannes Reinhardt and Krier, Anthony (2013) Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells. Applied Physics Letters, 103 (6). ISSN 0003-6951

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Abstract

The extended photo-response of solar cells containing ten periods of GaSb/GaAs quantum rings imbedded in the p-i-n junction has been described using a single-band representation of the type-II quantum ring structure. By fitting the experimental data, the authors were able to deduce that the quantum rings are well represented by a Gaussian height distribution and a large valence band discontinuity. The simulated band of states is shown to be well matched to the photoluminescence analysis of the structure, with the inhomogeneous size distribution resulting in a band of hole states roughly 390 meV above the valence band.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 103, (6), 2013 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4818126
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
77346
Deposited By:
Deposited On:
22 Dec 2015 13:36
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2020 05:28