Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

Garduno-Nolasco, Edson and Carrington, Peter James and Krier, Anthony and Missous, Mohamed (2014) Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices. IET Optoelectronics, 8 (2). pp. 71-75. ISSN 1751-8768

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Abstract

The authors report on the structural, the optical and the electrical properties of solar cells containing 20 layers of doped InAs/GaAs quantum dots (QDs). The structures were grown by molecular beam epitaxy and contain n dopant sheet densities of 8 and 16 × 1010cm−2, respectively, in between the QD layers. Under a 1 sun illumination, the open-circuit voltage (V oc) and the efficiency of the 8 × 1010cm−2 n-doped sample were increased to values of 0.73 V and 9.7%, respectively, compared with a reference undoped sample (a V oc of 0.70 V and an efficiency of 9.0%). However, the short-circuit current density (J sc) decreased from 20.1 to 17.4 mA/cm2 indicating bandfilling within the QD array.

Item Type: Journal Article
Journal or Publication Title: IET Optoelectronics
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/2200/2208
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 77345
Deposited By: ep_importer_pure
Deposited On: 22 Dec 2015 13:28
Refereed?: Yes
Published?: Published
Last Modified: 15 Jan 2020 07:56
URI: https://eprints.lancs.ac.uk/id/eprint/77345

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