Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Foote, Ryan H. and Ward, Daniel R. and Prance, Jonathan and Gamble, John King and Nielsen, Erik and Thorgrimsson, Brandur and Savage, D. E. and Saraiva, Andre and Friesen, Mark and Coppersmith, S. N. and Eriksson, M. A. (2015) Transport through an impurity tunnel coupled to a Si/SiGe quantum dot. Applied Physics Letters, 107 (10). ISSN 0003-6951

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Abstract

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Author was trying to obtain AAM.
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
75604
Deposited By:
Deposited On:
04 Dec 2015 11:12
Refereed?:
Yes
Published?:
Published
Last Modified:
27 May 2020 04:06