Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy

Zhuang, Qiandong and Anyebe, Ezekiel and Chen, R. and Liu, H. and Sanchez, Ana and Rajpalke, Mohana K. and Veal, Tim D. and Wang, Z M and huang, yongzheng and Sun, H. D. (2015) Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. Nano Letters, 15 (2). pp. 1109-1116. ISSN 1530-6984

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For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning the antimony (Sb) composition. This claim is substantiated by high-resolution transmission electron microscopy combined with photoluminescence spectroscopy. The pure InAs nanowires generally show a mixture of wurtzite (WZ) and zinc-blende (ZB) phases, where addition of a small amount of Sb (∼2–4%) led to quasi-pure WZ InAsSb NWs, while further increase of Sb (∼10%) resulted in quasi-pure ZB InAsSb NWs. This phase transition is further evidenced by photoluminescence (PL) studies, where a dominant emission associated with the coexistence of WZ and ZB phases is present in the pure InAs NWs but absent in the PL spectrum of InAs0.96Sb0.04 NWs that instead shows a band-to-band emission. We also demonstrate that the Sb addition significantly reduces the stacking fault density in the NWs. This study provides new insights on the role of Sb addition for effective control of nanowire crystal structure.

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Journal Article
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Nano Letters
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20 Aug 2015 12:44
Last Modified:
20 Sep 2023 00:45