Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

Craig, Adam and Marshall, Andrew and Tian, Z.-B. and Krishna, S. and Krier, Anthony (2013) Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays. Applied Physics Letters, 103. ISSN 0003-6951

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Abstract

InAs 0.79Sb0.21-based nBn photodetectors were fabricated on a GaAs substrate, using the interfacial misfit array growth mode. Reductions in the dark current density of more than two orders of magnitude at 300 K and more than six orders of magnitude at 200 K were found, in comparison with an InAs 0.87Sb0.13 p-i-n diode. At −0.5 V applied bias, the dark currents were found to be diffusion limited above 150 K. Background limited infrared photodetection and R0A values in excess of 106 Ωcm2 were observed at 150 K. Spectral response measurements revealed a cut-off wavelength of 5.3 μm at 200 K.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
74772
Deposited By:
Deposited On:
29 Jul 2015 14:18
Refereed?:
Yes
Published?:
Published
Last Modified:
22 Oct 2020 02:57