Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

Chang, Yu-Chen and Robson, Alexander and Harrison, Samuel and Zhuang, Qiandong and Hayne, Manus (2015) Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots. AIP Advances, 5 (6). ISSN 2158-3226

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We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1-xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.

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Journal Article
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AIP Advances
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Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in AIP Advances, 5 (6), 2015 and may be found at Date of acceptance is stated in attached document
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23 Jun 2015 15:16
Last Modified:
29 Mar 2023 00:12