The morphology of GaSb/GaAs nanostructures grown by MBE

Young, Robert (2012) The morphology of GaSb/GaAs nanostructures grown by MBE. In: IOP One-Day Quantum Dot Meeting, 2012-01-05.

Full text not available from this repository.


GaSb quantum dots embedded in GaAs-based device structures have exciting potential in a number of emerging electronic and optoelectronic applications. They are a type-II system whose band-structure provides strong confinement for heavy-holes and no confinement for electrons. Despite this type-II nature, excitons can still be bound to GaSb dots, with the Coulomb interaction dominating the physics of the electron’s binding.

Item Type:
Contribution to Conference (Poster)
Journal or Publication Title:
IOP One-Day Quantum Dot Meeting
ID Code:
Deposited By:
Deposited On:
23 Jun 2015 15:26
Last Modified:
15 Jul 2024 08:26