Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

Bin Esro, Mazran and Mazzocco, Riccardo and Vourlias, G. and Kolosov, Oleg and Milne, W.I. and Adamopoulos, George (2015) Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors. Applied Physics Letters, 106. ISSN 0003-6951

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Abstract

We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (LaxAl1-xOy) grown by spray pyrolysis in ambient atmosphere at 440 C. The structural, electronic, optical, morphological, and electrical properties of the LaxAl1-xOy films and devices as a function ofthe lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As deposited LaAlOy dielectrics exhibit a wide band gap (6.18eV), high dielectric constant (k~16),low roughness (1.9 nm), and very low leakage currents (<3nA/cm2). TFTs employing solution processed LaAlOy gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (10 V), high on/off current modulation ratio of >106, subthreshold swing of 650 mV dec-11, and electron mobility of 12 cm2 V-1 s-1.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Evidence of Acceptance is included on Publishers pdf.
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
73972
Deposited By:
Deposited On:
18 Jun 2015 05:57
Refereed?:
Yes
Published?:
Published
Last Modified:
09 Aug 2020 03:25