Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

Lu, Qi and Zhuang, Qiandong and Krier, Anthony (2015) Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers. Photonics, 2 (2). pp. 414-425. ISSN 2304-6732

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Abstract

In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 μm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm−1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

Item Type:
Journal Article
Journal or Publication Title:
Photonics
Additional Information:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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ID Code:
73648
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Deposited On:
18 Jun 2015 05:39
Refereed?:
Yes
Published?:
Published
Last Modified:
29 Oct 2020 03:54