H-tailored surface conductivity in narrow band gap In(AsN)

Velichko, A. V. and Patane, A. and Capizzi, M. and Sandall, I. C. and Giubertoni, D. and Makarovsky, O. and Polimeni, A. and Krier, A. and Zhuang, Q. and Tan, C. H. (2015) H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106 (2). ISSN 0003-6951

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Abstract

We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
VC 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
73367
Deposited By:
Deposited On:
13 Apr 2015 13:12
Refereed?:
Yes
Published?:
Published
Last Modified:
19 Sep 2020 03:17