Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Ji, Hai-ming and Liang, Baolai and Simmonds, Paul J. and Juang, Bor-chau and Yang, Tao and Young, Robert J. and Huffaker, Diana L. (2015) Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence. Applied Physics Letters, 106 (10). ISSN 0003-6951

[img]
Preview
PDF (1.4914895)
1.4914895.pdf - Published Version

Download (1MB)

Abstract

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (10), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914895
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
73340
Deposited By:
Deposited On:
18 Jun 2015 05:36
Refereed?:
Yes
Published?:
Published
Last Modified:
19 Sep 2020 03:16