Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit

Mousavi, Mahdi and Ahmadi, Mohammad Taghi and Sadeghi, Hatef and Nilghaz, Azadeh and Amin, Azizah and Johari, Zaharah and Ismail, Razali (2011) Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit. Journal of Computational and Theoretical Nanoscience, 8 (10). pp. 2029-2032. ISSN 1546-1955

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Abstract

Bilayer Graphene Nanoribbon (BGN) Carrier statistic in the non-degenerate and the degenerate limit is presented. Two dimensional BGN through AB configuration with width less than De-Broglie wave length can be understood as a one dimensional (1D) device. Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. Since a BGN field effect transistor (BGNFET) can be shaped by using graphene bilayers with an external controllable voltage which is perpendicular to the layers in gates.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Computational and Theoretical Nanoscience
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
72823
Deposited By:
Deposited On:
02 Feb 2015 12:20
Refereed?:
Yes
Published?:
Published
Last Modified:
13 May 2020 02:46